HS-undernummer 8542 32 Minnen

Ursprungsland, förmånstull och nästa steg ›

• 8542 32 11 Integrerade multikomponentkretsar
• 8542 32 19 Andra
• 8542 32 31 Med en minneskapacitet av högst 512 Mbit
• 8542 32 39 Med en minneskapacitet av mer än 512 Mbit
• 8542 32 45 Statiska direktminnen (S-RAMs) inbegripet direktbuffertminnen (cache-RAMs)
• 8542 32 55 UV-raderbara, programmerbara läsminnen (EPROMs)
• 8542 32 61 Med en minneskapacitet av högst 512 Mbit
• 8542 32 69 Med en minneskapacitet av mer än 512 Mbit
• 8542 32 75 Andra minnen
• 8542 32 90 Andra minnen

Exempel ur EU:s databas över bindande klassificeringsbesked (BKB/BTI). Beskeden gäller bara för sin innehavare och många har löpt ut — se dem som vägledning, inte som beslut för din vara.

• AN INTEGRATED CIRCUIT WITH MEMORY OF 32 MBITS. THIS DEVICE IS AN ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY WHICH REMAINS STABLE WHEN IS POWER IS REMOVED THE INTEGRATED CIRCUIT HAS A 1.8V SUPPLY VOLTAGE, WITH A SERIAL OR PARALLEL FIELD-PROGRAMMABLE GATE ARRAY CONFIGURATION INTERFACE THE INTEGRATED CIRCUIT ALSO FEATURES A LOW-POWER ADVANCED COMPLEMENTARY METAL OXIDE SEMICONDUCTOR NOR FLASH PROCESS

  8542 32 61 · GB 2019 · GBBTI504520489

• THE PRODUCT IS AN ELECTRONIC COMPONENT CALLED A SIP (SYSTEM-IN-PACKAGE) COMPONENT. THESE SIP COMPONENTS ARE COMPOSED OF COMMERCIAL MEMORIES STACKED VERTICALLY AND ENCASED IN A HARD PLASTIC COMPOUND. SUCH COMPONENTS ARE VERY ROBUST WHEN EXPOSED TO VIBRATIONS, SHOCKS AND TEMPERATURE CHANGES. THIS MAKES THEM SUITABLE FOR HARSH ENVIRONMENTS SUCH AS AEROSPACE AND SPACE. THESE SIP COMPONENTS USE…

  8542 32 11 · IE 2019 · IEBTI19NT-14-8383-01

• A CMOS STATIC RAM. THIS IS RAM (RANDOM ACCESS MEMORY) INTEGRATED CIRCUIT SPECIFICALLY DESIGNED FOR HOLDING MEMORY IN A DEVICE.

  8542 32 45 · IE 2017 · IE17NT-14-5207-01

• AN INTEGRATED CIRCUIT CHIP CONTAINING A MICROPROCESSOR (SPARC) AND ASSOCIATED FUNCTIONS (E.G NETWORK, MEMORY CONTROLLER ETC.) THIS CHIP IS A HIGH RELIABILITY CHIP USED IN THE SPACE AND AEROSPACE INDUSTRIES. THE PRODUCT IS CONSIDERED TO BE A MULTI-COMPONENT INTEGRATED CIRCUIT (MCO) MEMORY.

  8542 32 11 · IE 2017 · IE17NT-14-4807-02

• MEMORY IN THE FORM OF AN INTEGRATED CIRCUIT OF MOS TECHNOLOGY

  8542 32 90 · IE 2014 · IE13NT-14-1974-1

• CACHE MEMORY IN THE FORM OF AN INTEGRATED CIRCUIT OF MOS TECHNOLOGY FOR USE IN COMPUTERS

  8542 32 45 · IE 2014 · IE13NT-14-1975-05

• D-RAM-DYNAMIC RANDOM ACCESS MEMORY IN THE FORM OF AN INTEGRATED CIRCUIT OF MOS TECHNOLOGY. IT IS FOR USE IN A COMPUTER AND HAS STORAGE CAPACITY OF BETWEEN 4MB TO 16MB.

  8542 32 31 · IE 2014 · IE13NT-14-1975-01

• RANDOM ACCESS MEMORY (RAM) IN THE FORM OF AN INTEGRATED CIRCUIT OF MOS TECHNOLOGY FOR USE IN COMPUTERS

  8542 32 90 · IE 2014 · IE13NT-14-1975-04